3D Integrated Microelectronic Assembly With Stress Reducing Interconnects And Method Of Making Same

ABSTRACT

A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handier with first and second opposing surfaces, a second semiconductor device, and conductive pads at the handler first surface which are electrically coupled to the second semiconductor device). The first and second microelectronic elements are integrated such that the second surfaces face each other. The first microelectronic element includes conductive elements each extending from one of its conductive pads, through the substrate to the second surface. The second microelectronic element includes conductive elements each extending between the handler first and second surfaces. The conductive elements of the first microelectronics element are electrically coupled to the conductive elements of the second microelectronics element.

FIELD OF THE INVENTION

The present invention relates to semiconductor packaging, and moreparticularly to a 3D integration package in which a semiconductor devicepackage is mounted on another semiconductor device package.

BACKGROUND OF THE INVENTION

The trend for semiconductor devices is smaller integrated circuit (IC)devices (also referred to as chips), packaged in smaller packages (whichprotect the chip while providing off chip signaling connectivity). Withrelated chip devices (e.g. an image sensor and its processor), one wayto accomplish size reduction is to form both devices as part of the sameIC chip (i.e. integrate them into a single integrated circuit device).However, that raises a whole host of complex manufacturing issues thatcan adversely affect operation, cost and yield. Another technique forcombining related chip devices is 3D IC packaging, which saves space bystacking separate chips inside a single package or stacking one chippacking on another chip package.

3D packaging can result in increased density and smaller form factor,better electrical performance (because of shorter interconnect lengthwhich allows for increased device speed and lower power consumption),better heterogeneous integration (i.e. integrate different functionallayers such as an image sensor and its processor), and lower cost.

However, 3D integration for microelectronics packaging faces challengesas well, such as high cost of 3D processing infrastructure andsustainable supply chain. Existing 3D IC packaging techniques to formthrough-silicon via's (TSV's), including Via-First, Via-Last andVia-middle processes, utilize semiconductor lithographic processes whichare inherently complex and costly. As a result, few companies in theworld can afford the billions of dollars in CMOS R&D per year to keeppace. Moreover, interconnects between IC packages can fail due to thestresses incurred during manufacturing and mounting, as well as thermalor vibrational stresses incurred during operation. A complementary,cost-effective TSV solution is needed to enable use of a separate butclosely coupled image processor enabling the pixel array area on theimage sensor to be maximized, and enable direct memory access, bystacking and vertically interconnecting multiple chips.

BRIEF SUMMARY OF THE INVENTION

The present invention is a microelectronic assembly providing a novel 3Dintegration package for packaging/encapsulating IC devices, and enables3D integration of multiple related but distinct IC devices such as animage sensor with its processor.

The microelectronic assembly comprises first and second microelectronicelements. The first microelectronic element includes a substrate withfirst and second opposing surfaces, a semiconductor device, andconductive pads at the first surface which are electrically coupled tothe semiconductor device. The second microelectronic element includes ahandler with first and second opposing surfaces, a second semiconductordevice, and conductive pads at the handler first surface which areelectrically coupled to the second semiconductor device. The first andsecond microelectronic elements are integrated to each other such thatthe second surfaces face each other. The first microelectronic elementincludes conductive elements each extending from one of the conductivepads and through the substrate to the second surface, of the firstmicroelectronic element. The second microelectronic element includesconductive elements each extending between the first and second surfacesof the handier. Each of the conductive elements of the firstmicroelectronics element is electrically coupled to at least one of theconductive elements of the second microelectronics element.

The method of forming the microelectronic assembly comprises providingfirst and second microelectronic elements. The first microelectronicelement comprises a substrate with first and second opposing surfaces, asemiconductor device, and conductive pads at the first surface which areelectrically coupled to the semiconductor device. The secondmicroelectronic element comprises a handler with first and secondopposing surfaces, a second semiconductor device, and conductive pads atthe handler first surface which are electrically coupled to the secondsemiconductor device. The method further comprises forming conductiveelements each extending from one of the conductive pads and through thesubstrate to the second surface, of the first microelectronic element,forming conductive elements each extending between the first and secondsurfaces of the handler, and integrating the first and secondmicroelectronic elements to each other such that the second surfacesface each other and such that each of the conductive elements of thefirst microelectronics element is electrically coupled to at least oneof the conductive elements of the second microelectronics element.

Other objects and features of the present invention will become apparentby a review of the specification, claims and appended figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-10 are cross sectional side views of a semiconductor packagingstructure showing in sequence the steps in the processing of thepackaging structure in the formation of the first packaging structure.

FIGS. 11-17 are cross sectional side views of a semiconductor packagingstructure showing in sequence the steps in the processing of thepackaging structure in the formation of the second packaging structure.

FIG. 18 is a cross sectional side view of the second packaging structuremounted to the first packaging structure.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is wafer level 3D IC integration package solutionthat is ideal for packaging/encapsulating IC devices, and enables 3Dintegration of multiple related IC devices such as image sensors andtheir processors. The formation of the 3D integration package isdescribed below, first with respect to the formation of a first packagefor a first IC device, then a second package for a second IC package,then the integration of the two packages to form a microelectronicassembly that integrates the two IC devices.

FIGS. 1-10 illustrate the formation of the first package 1. The firstpackage formation process begins with a crystalline handler 10 as shownin FIG. 1. A non-limiting example can include a handler of crystallinehaving a thickness of around 600 μm. A cavity 12 is formed in thehandler, as shown in FIG. 2. Cavity 12 can be formed by the use of alaser, a plasma etching process, a sandblasting process, a mechanicalmilling process, or any other similar method. Preferably cavity 12 isformed by photo-lithography plasma etching, which includes forming alayer of photo resist on the handler 10, patterning the photo resistlayer to expose a select portion of handier 10, and then performing aplasma etch process (e.g. using a SF6 plasma) to remove the exposedportion of the handler 10 to form the cavity 12. Preferably, the cavityextends no further than ¾ of the crystalline thickness, or at leastleaves a minimum thickness at the bottom of the cavity of around 50 μm.The plasma etch can be anisotropic, tapered, isotropic, or combinationsthereof.

Through holes (via's) 14 are then formed through the thickness of thehandler 10 adjacent to but connecting with the cavity 12, as illustratedin FIG. 3. Holes 14 can be formed using a laser, a plasma etchingprocess, a sandblasting process, a mechanical milling process, or anysimilar method. Preferably, the through holes 14 are formed by plasmaetching in a similar manner as the formation of the cavity 12 (exceptthat the holes 14 extend all the way through the thickness of thecrystalline handier 10). Plasma silicon etching (e.g. anisotropic,tapered, isotropic, or combinations thereof) allows for various shapesof the via profile. Preferably, the profile of holes 14 is tapered, witha larger dimension at the surface through which cavity 12 was formed.Preferably the minimum hole diameter is around 25jam, and the angles ofthe wails are between 5° and 35° relative to a direction perpendicularto the surfaces of the crystalline handler through which the holes 14are formed, such that the hole has a smaller cross-sectional size at onesurface of the crystalline handler 10 than the other surface.

The through holes 14 are then filled with a compliant dielectricmaterial 16 as shown in FIG. 4, using a spin coating process, a sprayprocess, a dispense process, an electrochemical deposition process, alamination process, or any other similar method. A compliant dielectricis a relatively soft material (e.g. solder mask) that exhibitscompliance in all three orthogonal directions, and can accommodate thecoefficient of thermal expansion (CTE) mismatch between the silicon(˜2.6 ppm/° C.) and Cu (˜17 ppm/° C.) interconnect. Compliant dielectricmaterial 16 is preferably a polymer, such as BCB (Benzocyclobutene),solder mask, solder resist, or BT epoxy resin.

Through holes 18 are then formed through the dielectric material 16.Holes 18 can be formed by using a CO₂ laser (e.g. spot size of about 70μm) for larger sized holes 18, or a UV laser (e.g. spot size of about 20μm at a wavelength of 355 nm) for smaller sized holes 18 (e.g. less than50 μm in diameter). Laser pulse frequencies between 10 and 50 kHz at apulse length of less than 140 ns can be used. The side walls of thethrough holes 18 are then metallized (i.e. coated with a metallizationlayer 20). The metallization process preferably starts with the desmearprocess for removing any resin smeared on the interior wails of thethrough holes 18 (caused by the drilling through dielectric materialssuch as epoxy, polyimide, cyanate ester resins, etc). The processinvolves contacting the resin smear with a mixture ofgamma-butyrolactone and water to soften the resin smear, followed bytreatment with an alkaline permanganate solution to remove the softenedresin, and treatment with an aqueous acidic neutralizes to neutralizeand remove the permanganate residues. After desmear treatment, theinitial conductive metallization layer 20 is formed by electrolesscopper plating, followed by a photo-lithography etch back so that themetallization layer extends away from the holes 18 along dielectric 16for a short distance (e.g. 25 μm or more) at both ends of holes 18 (butnot so far as to make electrical contact with crystalline 10. Adhesionis obtained at the plated interface by an anchor effect from the surfaceroughness. The resulting structure is shown in FIG. 5.

A dielectric layer 22 is then formed on the surface of the handler thatdoes not contain the opening to cavity 12. Preferably, this is done byapplying a photo-imagable dielectric on the handler surface by use of aspin coating process or a spray process. A photo-lithographic process(i.e. UV exposure, selective material removal) is then used toselectively remove portions of the dielectric layer 22 over (and thusexposing) through-holes 18 and horizontal portions of metallizationlayer 20. A metal layer is then sputtered over dielectric layer 22. Aphoto-lithographic process (i.e. resist layer deposition, UV exposurethrough a mask, removal of selected portions of resist to exposeselected portions of metal layer, metal etching, and photo resistremoval) is used to selectively remove portions of the metal layerleaving metal pads 24 disposed over through holes 18 and in electricalcontact with metallization layer 20. The resulting structure is shown inFIG. 6. While not shown, the center of the metal pads 24 may have asmall hole there through aligned with through-holes 18.

An IC chip 26 is inserted into cavity 12 as shown in FIG. 7. The IC chip26 includes an integrated circuit (i.e. semiconductor device) 27. The ICchip 26 is insulated from handler 10 by a dielectric insulating layer28. The insertion of the IC chip 26 and formation of the insulatinglayer 28 can be performed in several ways. One way is to form theinsulating layer 28 on the walls of the cavity 12 before insertion ofthe bare IC chip 26 (e.g. by spray coating epoxy, by electro-chemicaldeposition, etc.). A second way is to form the insulating layer 28 onthe back surfaces of IC chip 26 before it is inserted into cavity 12. Athird way is to form insulating layers both on the cavity walls and onthe IC chip back-surfaces before chip insertion, where the twoinsulating layers are bonded together upon chip insertion to forminsulation layer 28. The IC chip 26 includes bonding pads 30 exposed onits bottom surface.

An encapsulation insulation layer 32 is then formed on the structurewhich encapsulates IC chip 26 inside cavity 12. Preferably, layer 32 isformed using a photo-imagable dielectric (e.g. a solder mask). The layeris pre-cured to partially remove solvent so the surface is not tacky. Aphoto lithography step is then performed (i.e. UV exposure throughmask), after which select portions of the insulation layer 32 areremoved to expose the IC chip bond pads 30 and the metallization layer20 extending out of the through holes 18. Post curing can then beperformed to increase the surface hardness of layer 32. A metal layer isthen deposited over insulation layer 32 (e.g. by metal sputtering,followed by the deposition of a photo-imagable resist layer). A photolithography step is then performed (i.e. UV exposure through mask andselective resist layer removal), followed by selective metal etching ofthose portions exposed by the photo resist removal, leaving metalfan-out and fan-in bond pads 34 in electrical contact with IC chip bondpads 30, and leaving interconnect bond pads 36 in electrical contactwith the metallization layer 20 extending out of through holes 18. Metalplating of the bond pads 34/36 can occur here as well The resultingstructure is shown in FIG. 8 (after photo resist removal).

An encapsulation insulation layer 38 is then formed over insulationlayer 32 and bond pads 34/36, followed by a selective etch back toexpose bond pads 34/36. The selective etch back can be performed by aphoto-lithographic process to selectively remove those portions of layer38 over bond pads 34/36. BGA interconnects 40 are then formed on bondpads 34/36 using a screen printing process of a solder alloy, or by aball placement process, or by a plating process. BGA (Bail Grid Array)interconnects are rounded conductors for making physical and electricalcontact with counterpart conductors, usually formed by soldering orpartially melting metallic balls onto bond pads. The resulting structureis shown in FIG. 9.

A metal layer is then deposited over insulation layer 22 (e.g. by metalsputtering, followed by the deposition of a photo-imagable resistlayer). A photo lithography step is then performed (i.e. UV exposurethrough mask and selective resist layer removal), followed by selectivemetal etching of those portions exposed by the photo resist removal,leaving metal fan-out and fan-in bond pads 52 which are in electricalcontact with metal pads 24. Metal plating of the bond pads 52 can occurhere as well. An insulation layer 54 is then formed over insulationlayer 22 and bond pads 52, followed by a selective etch back to exposeselect portions of bond pads 52. The selective etch back can beperformed by a photo-lithographic process to selectively remove thoseportions of layer 54 over the select portions of bond pads 52. Theresulting structure is the microelectronic device shown in FIG. 10(after photo resist removal).

FIGS. 11-17 illustrate the formation of the second package. The secondpackage formation process begins with a compliant supportive structure,such as for example a polymer sheet 60, as shown in FIG. 11. Anon-limiting example can include a sheet of polymer having a thicknessof around 100 μm. A hole 62 is formed through the polymer sheet supportstructure 60, as shown in FIG. 12. Hole 62 can be formed by the use of alaser, a plasma etching process, a sandblasting process, a mechanicalmilling process, or any other similar method. Preferably hole 62 isformed by a laser. A transparent protective layer 64 such as atransparent glass wafer is attached to compliant polymer sheet 60 whereit covers hole 62, as illustrated in FIG. 13. Preferably protectivelayer 64 is at least 100 μm thick.

The compliant sheet and protective layer 60/64 are then attached to asecond IC chip 66, as illustrated in FIG. 14. In the exemplar embodimentof FIG. 14, IC chip 66 is an image sensor, which includes a substrate68, an array of pixel sensors 70, a color filter and microlens array 72over the pixel sensors 70, and bond pads 74 electrically coupled to thepixel sensors 70 for supplying output electrical signals from the pixelsensors. An optional thinning of the silicon substrate 68 can beperformed after the attachment of substrate/cover 60/64, preferablyleaving substrate 68 with a thickness of at least 50 μm.

Electrical interconnects are formed in silicon 68 in similar manner asdescribed above with respect to electrical interconnects formed throughhandler 10. Specifically, holes 76 are formed into the bottom surface ofsubstrate 68 until they reach and expose bond pads 74, as illustrated inFIG. 15. Holes 76 can be formed using a laser, a plasma etching process,a sandblasting process, a mechanical milling process, or any similarmethod. Preferably, the holes 76 are formed by plasma etching (e.g.anisotropic, tapered, isotropic, or combinations thereof), which allowsfor various shapes of the hole profile. Preferably, the profile of holes76 is tapered, with a larger dimension at the surface through which theholes 76 are made, and a smaller dimension at bond pads 74. Preferablythe minimum hole diameter of bond pads 74 is around 10 μm, and theangles of the walls are between 5° and 35° relative to a directionperpendicular to the surface of the silicon 68 through which the holes76 are formed.

A layer of compliant dielectric material 78 is formed that covers thebottom surface of substrate 68 and fills holes 76, as shown in FIG. 16,using a spin coating process, a spray process, a dispense process, anelectrochemical deposition process, a lamination process, or any othersimilar method. Compliant dielectric material 78 is preferably apolymer, such as BCB (Benzocyciobutene), solder mask, solder resist, BTepoxy resin or epoxy acrylate. Holes 80 are then formed through thedielectric material 78, as shown in FIG. 16. Holes 80 can be formed byusing a CO₂ laser (e.g. spot size of about 70 μm) for larger sized holes80, or a UV laser (e.g. spot size of about 20 μm at a wavelength of 355nm) for smaller sized holes 80 (e.g. less than 50 μm in diameter). Laserpulse frequencies between 10 and 50 kHz at a pulse length of less than140 ns can be used. The side walls of holes 80 are then metallized (i.e.coated with a metallization layer 82), making electrical contact withbonding pads 74. The metallization process preferably starts with thedesmear process for removing any resin smeared on the interior walls ofthe holes 80 (caused by the drilling through dielectric materials suchas epoxy, polyimide, cyanate ester resins, etc). The process involvescontacting the resin smear with a mixture of gamma-butyrolactone andwater to soften the resin smear, followed by treatment with an alkalinepermanganate solution to remove the softened resin, and treatment withan aqueous acidic neutralizes to neutralize and remove the permanganateresidues. After desmear treatment, the initial conductive metallizationlayer 82 is formed by electroless copper plating, followed by aphoto-lithography etch back so that the metallization layer extends awayfrom the holes 80 along dielectric 78 for a short distance. Adhesion isobtained at the plated interface by an anchor effect from the surfaceroughness. The resulting structure is shown in FIG. 16.

A metal layer is then formed on insulation layer 78 (e.g. by metalsputtering, followed by the deposition of a photo-imagable resistlayer). A photo lithography step is then performed (i.e. UV exposurethrough mask and selective resist layer removal), followed by selectivemetal etching of those portions expose by the photo resist removal,leaving metal bond pads 84 which are in electrical contact withmetallization layer 82 extending from holes 80. Metal plating of thebond pads 84 can occur here as well. An insulation layer 86 is thenformed over insulation layer 78 and bond pads 84, followed by aselective etch back to expose bond pads 84. The selective etch back canbe performed by a photo-lithographic process to selectively remove thoseportions of layer 86 over the bond pads 84. BGA interconnects 88 arethen formed on bond pads 84 using a screen printing process of a solderalloy, or by a ball placement process, or by a plating process. BGA(Ball Grid Array) interconnects are rounded conductors for makingphysical and electrical contact with counterpart conductors, usuallyformed by soldering or partially melting metallic balls onto bond pads.The resulting structure is the microelectronic device shown in FIG. 17.

The second package 2 Is then integrated (i.e. mechanically attached ormounted), to the first package 1 as illustrated in FIG. 18, where BGAinterconnects 88 of the second package 2 contact and make electricalconnections with bond pads 52 of the first package 1. Integration can beperformed using conventional pick-and-place or die attachment equipment.Preferably this is performed in a heated environment, so that EGAinterconnects 88 bond with (and make a secure electrical connectionbetween) both packages 1 and 2. The resulting structure is a pair ofmicroelectronic devices attached together, with bond pads on theirrespective surfaces that face away from each other (outwardly facingsurfaces). The bond pads of one of the microelectronic devices arecoupled to bond pads on the outward facing surface of the othermicroelectronic device (via electrically conductive elements that extendthrough the first microelectronic device and electrically conductiveelements that extend through the second microelectronic device), so thatbond pads on that outward facing surface of the other microelectronicdevice provide signals from both microelectronic devices.

The IC packaging technique and the method of its manufacture describedabove and illustrated in the figures have several advantages. First, thesilicon based IC chip 26 is housed inside handler 10, which providesmechanical and environmental protection of IC chip 26. Second, utilizinga compliant dielectric material 28 for securing IC chip 26 insidehandler 10 reduces thermal and mechanical stresses that could adverselyaffect both. Third, using a handler structure with fan-out and fan-inpads for packaging IC chip 26 (which can be separately tested andverified before insertion into packaging 10) enhances reliability andyield. Fourth, electrical connections for both chips are provided on acommon surface of the handler 10, for efficient signal coupling andconnection. Fifth, utilizing a wafer level dielectric lamination forlayer 32 provides very low impedance across a very wide frequency range.This impedance can be as much as an order of magnitude or more lowerthan existing spray and spin coated dielectrics. These ultra-thindielectric laminates also offer the advantage of dampening noise on thepower and ground planes and will be important for achieving acceptableelectrical performance in future high speed digital designs.

There are also a number of advantages of thethrough-polymer-interconnect formed through holes 18. First, theseinterconnects are conductive elements that reliably re-route theelectrical signals from package 2, through handler structure 10, to thesame side of the handler structure 10 which contains the electricalcontacts for the IC chip 26. Second, by forming the walls ofthrough-holes 14 with a slant, it reduces potentially damaging inducingstress on the crystalline that can result from 90 degree corners. Third,the slanted sidewalls of holes 14 also mean there are no negative angleareas that can result in gaps formed with dielectric material 16.Fourth, by forming insulation material 16 first, and then formingmetallization layer 20 thereon, metal diffusion into the crystallinestructure of handler 10 is avoided. Fifth, forming metal layer 20 usinga plating process is superior to other metallization techniques such assputter deposition, because the plating process is less likely to damageinsulation material 16. Sixth, using a compliant insulation material 16to form the sidewalls of holes 18 is more reliable. Finally, thecreation of the through-polymer-interconnects using laser drillingthrough polymer, desmearing, and metal plating, is less expensive thanusing semiconductor sputtering and metal deposition tools.

The through-polymer-interconnects formed through holes 80 provide thesame advantages as those mentioned above formed through hole 18 (i.e.conductive elements that route electrical signals from bond pads 74,through substrate 68, for electrical coupling to bond pads 52 via bondpads 84). Additionally, the through-polymer-interconnects formed throughholes 18 and 80 absorb stresses that could otherwise damage thesurrounding structure, given the use of compliant materials 16 and 78.Additional stresses are absorbed by having the interconnects in holes 80terminate at the bond pads 74, by having a compliant substrate over bondpads 80, and by using a compliant material for insulation layer 86.

The packaging configuration described above is ideal for and describedin the context of (but not necessarily limited to) IC chip 66 being animage sensor, and IC chip 26 being a processor for processing thesignals from the image sensor. An image sensor is a complementarymetal-oxide semiconductor (CMOS) device that includes an integratedcircuit containing an array of pixel sensors, each pixel containing aphotodetector and preferably its own active amplifier. Each pixel sensorconverts the light energy to a voltage signal. Additional circuitry onthe chip may be included to convert the voltage to digital data. Theimage processing chip comprises a combination of hardware processors)and software algorithms. The image processor gathers the luminance andchrominance information from the individual pixels sensors and uses itto compute/interpolate the correct color and brightness values for eachpixel. The image processor evaluates the color and brightness data of agiven pixel, compares them with the data from neighboring pixels andthen uses a demosaicing algorithm to reconstruct a full color image fromthe incomplete color samples, and produces an appropriate brightnessvalue for the pixel. The image processor also assesses the whole pictureand corrects sharpness and reduce noise of the image.

The evolution of image sensors results in the ever higher pixel count inimage sensors, and the additional camera functionality, such as autofocus, zoom, red eye elimination, face tracking, etc, which requiresmore powerful image sensor processors that can operate in higher speeds.Photographers don't want to wait for the camera's image processor tocomplete its job before they can carry on shooting—they don't even wantto notice some processing is going on inside the camera. Therefore,image processors must be optimized to cope with more data in the same oreven shorter period of time.

It is to be understood that the present invention is not limited to theembodiment(s) described above and illustrated herein, but encompassesany and all variations falling within the scope of the appended claims.For example, references to the present invention herein are not intendedto limit the scope of any claim or claim term, but instead merely makereference to one or more features that may be covered by one or more ofthe claims. Materials, processes and numerical examples described aboveare exemplary only, and should not be deemed to limit the claims.Further, as is apparent from the claims and specification, not allmethod steps need be performed in the exact order illustrated orclaimed, but rather in any order separately or simultaneously thatallows the proper formation of the IC packaging of the presentinvention. Single layers of material could be formed as multiple layersof such or similar materials, and vice versa. While the inventivepackaging configuration is disclosed in the context of IC chip 26 beingan image sensor processor and IC chip 66 being an image sensor, thepresent invention is not necessary limited to those IC chips.

It should be noted that, as used herein, the terms “over” and “on” bothinclusively include “directly on” (no intermediate materials, elementsor space disposed therebetween) and “indirectly on” (intermediatematerials, elements or space disposed therebetween). Likewise, the term“adjacent” includes “directly adjacent” (no intermediate materials,elements or space disposed therebetween) and “indirectly adjacent”(intermediate materials, elements or space disposed there between),“mounted to” includes “directly mounted to” (no intermediate materials,elements or space disposed there between) and “indirectly mounted to”(intermediate materials, elements or spaced disposed there between), and“electrically coupled” includes “directly electrically coupled to” (nointermediate materials or elements there between that electricallyconnect the elements together) and “indirectly electrically coupled to”(intermediate materials or elements there between that electricallyconnect the elements together). For example, forming an element “over asubstrate” can include forming the element directly on the substratewith no intermediate materials/elements therebetween, as well as formingthe element indirectly on the substrate with one or more intermediatematerials/elements therebetween.

1. A microelectronic assembly, comprising: a first microelectronicelement comprising: a substrate with first and second opposing surfaces,a semiconductor device, and conductive pads at the first surface whichare electrically coupled to the semiconductor device; a secondmicroelectronic element comprising: a handler with first and secondopposing surfaces, a second semiconductor device, and conductive pads atthe handler first surface which are electrically coupled to the secondsemiconductor device; the first and second microelectronic elements areintegrated to each other such that the second surfaces face each other;the first microelectronic element includes conductive elements eachextending from one of the conductive pads and through the substrate tothe second surface, of the first microelectronic element; the secondmicroelectronic element includes conductive elements each extendingbetween the first and second surfaces of the handler; and each of theconductive elements of the first microelectronics element iselectrically coupled to at least one of the conductive elements of thesecond microelectronics element.
 2. The microelectronic assembly ofclaim 1, wherein the semiconductor device of the first microelectronicelement is formed on the substrate.
 3. The microelectronic assembly ofclaim 1, wherein each of the conductive elements of the firstmicroelectronic element comprises: a hole formed in the substrate with asidewall extending from the second surface of the substrate to one ofthe conductive pads of the first microelectronic element; a compliantdielectric material disposed along the sidewall; and a conductivematerial disposed along the compliant dielectric material and extendingbetween the second surface of the substrate and the one conductive padof the first microelectronic element.
 4. The microelectronic assembly ofclaim 3, wherein the compliant dielectric material includes a polymer.5. The microelectronic assembly of claim 3, wherein for each of theconductive elements of the first microelectronic element, the hole istapered such that the hole has a smaller cross-sectional dimension atthe one conductive pad than at the second surface of the substrate. 6.The microelectronic assembly of claim 3, wherein for each of theconductive elements of the first microelectronic element, the sidewallextends in a direction between 5° and 35° relative to a direction thatis perpendicular to the first and second surfaces of the substrate. 7.The microelectronic assembly of claim 1, wherein the secondmicroelectronic element further comprises: a cavity formed in thehandler, wherein the semiconductor device of the second microelectronicelement is disposed in the cavity.
 8. The microelectronic assembly ofclaim 1, wherein the semiconductor device of the second microelectronicelement is formed on a substrate that is disposed in the cavity.
 9. Themicroelectronic assembly of claim 1, wherein each of the conductiveelements of the second microelectronic element comprises: a hole formedin the handler with a sidewall extending between the first and secondsurfaces of the handier; a compliant dielectric material disposed alongthe sidewall; and a conductive material disposed along the compliantdielectric material and extending between the first and second surfacesof the handler.
 10. The microelectronic assembly of claim 9, wherein thecompliant dielectric material includes a polymer.
 11. Themicroelectronic assembly of claim 9, wherein for each of the conductiveelements of the second microelectronic element, the hole is tapered suchthat the hole has a smaller cross-sectional dimension at the secondsurface than at the first surface of the handler.
 12. Themicroelectronic assembly of claim 9, wherein for each of the conductiveelements of the second microelectronic element, the sidewall extends ina direction between 5° and 35° relative to a direction that isperpendicular to the first and second surfaces of the handler.
 13. Themicroelectronic assembly of claim 1, wherein the semiconductor device ofthe first microelectronic assembly is an image sensor and thesemiconductor device of the second microelectronic assembly is aprocessor for processing signals from the image sensor.
 14. Themicroelectronic assembly of claim 13, wherein the image sensor comprisesan array of pixel sensors each including a photodetector for convertinglight energy to a voltage signal, and wherein the processor isconfigured to receive the voltage signals and to compute or interpolatecolor and brightness values for each of the voltage signals from thepixel sensors.
 15. The microelectronic assembly of claim 1, wherein theintegration of the first and second microelectronic elements comprises aplurality of BGA interconnects each electrically coupled between one ofthe conductive pads of the first microelectronic elements and one of theconductive pads of the second microelectronic elements.
 16. A method offorming a microelectronic assembly, comprising: providing a firstmicroelectronic element that comprises: a substrate with first andsecond opposing surfaces, a semiconductor device, and conductive pads atthe first surface which are electrically coupled to the semiconductordevice; providing a second microelectronic element comprising: a handlerwith first and second opposing surfaces, a second semiconductor device,and conductive pads at the handier first surface which are electricallycoupled to the second semiconductor device; forming conductive elementseach extending from one of the conductive pads and through the substrateto the second surface, of the first microelectronic element; formingconductive elements each extending between the first and second surfacesof the handler; and integrating the first and second microelectronicelements to each other such that the second surfaces face each other andsuch that each of the conductive elements of the first microelectronicselement is electrically coupled to at least one of the conductiveelements of the second microelectronics element.
 17. The method of claim16, wherein the semiconductor device of the first microelectronicelement is formed on the substrate.
 18. The method of claim 16, theforming of each of the conductive elements of the first microelectronicelement comprises: forming a hole in the substrate with a sidewallextending from the second surface of the substrate to one of theconductive pads of the first microelectronic element; forming acompliant dielectric material disposed along the sidewall; and forming aconductive material disposed along the compliant dielectric material andextending between the second surface of the substrate and the oneconductive pad of the first microelectronic element.
 19. The method ofclaim 18, wherein the compliant dielectric material includes a polymer.20. The method of claim 18, wherein for each of the conductive elementsof the first microelectronic element, the hole is tapered such that thehole has a smaller cross-sectional dimension at the one conductive padthan at the second surface of the substrate.
 21. The method of claim 18,wherein for each of the conductive elements of the first microelectronicelement, the sidewall extends in a direction between 5° and 35° relativeto a direction that is perpendicular to the first and second surfaces ofthe substrate.
 22. The method of claim 16, further comprising: forming acavity in the handler; and disposing the semiconductor device of thesecond microelectronic element in the cavity.
 23. The method of claim16, wherein the semiconductor device of the second microelectronicelement is formed on a substrate that is disposed in the cavity.
 24. Themethod of claim 16, wherein the forming of each of the conductiveelements of the second microelectronic element comprises: forming a holein the handler with a sidewall extending between the first and secondsurfaces of the handler; forming a compliant dielectric materialdisposed along the sidewall; and forming a conductive material disposedalong the compliant dielectric material and extending between the firstand second surfaces of the handler.
 25. The method of claim 24, whereinthe compliant dielectric material includes a polymer.
 26. The method ofclaim 24, wherein for each of the conductive elements of the secondmicroelectronic element, the hole is tapered such that the hole has asmaller cross-sectional dimension at the second surface than at thefirst surface of the handler.
 27. The method of claim 24, wherein foreach of the conductive elements of the second microelectronic element,the sidewall extends in a direction between 5° and 35° relative to adirection that is perpendicular to the first and second surfaces of thehandler.
 28. The method of claim 16, wherein the semiconductor device ofthe first microelectronic assembly is an image sensor and thesemiconductor device of the second microelectronic assembly is aprocessor for processing signals from the image sensor.
 29. The methodof claim 28, wherein the image sensor comprises an array of pixelsensors each including a photodetector for converting light energy to avoltage signal, and wherein the processor is configured to receive thevoltage signals and to compute or interpolate color and brightnessvalues for each of the voltage signals from the pixel sensors.
 30. Themethod of claim 16, wherein the integration comprises: forming aplurality of BGA interconnects each electrically coupled between one ofthe conductive pads of the first microelectronic elements and one of theconductive pads of the second microelectronic elements.